
ICE20N65 N-Channel
Enhancement Mode MOSFET
Features
? Low rDS(on)
? Ultra Low Gate Charge
? High dV/dt capability
? High Unclamped Inductive Switching (UIS) capability
? High peak current capability
? Increased transconductance performance
? Optimized design for high performance power systems
聯系方式,13728809630,價格實惠,PI,長城,康佳都在大量使用,交貨周期快,1-2周,相比IR,ST快很多,性能絕對保證.
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