如何對(duì)MOS 做IEC 60335-1 A2 cl 19.11.2 g)的測(cè)試？
節(jié)示標(biāo)準(zhǔn)如下：
19.11.2 g) failure of an electronic power switching device in a partial turn-on mode with loss of gate (base) control. During this test, winding temperatures shall no exceed the values give in 19.7.
NOTE 3 This mode may be simulated by disconnecting the electronic power switching device gate (base) terminal and connecting an external adjustable power supply between the gate (base ) terminal and the source (emitter) terminal of the electronic power switching device. The power supply is then varied so as to achieve a current that will not damage the electronic power switching device but give the most onerous conditions of test.
標(biāo)準(zhǔn)的意思:
將MOS管的柵級(jí)斷開(kāi)再外加電源為MOS管供電，目的是要模擬出既要MOS不燒壞又要出現(xiàn)發(fā)熱的最嚴(yán)酷的情況。標(biāo)準(zhǔn)上只是說(shuō)了個(gè)原則上是：既要MOS不燒壞又要出現(xiàn)發(fā)熱的最嚴(yán)酷的情況.
但是實(shí)際操作比較困難!
那位大佬有沒(méi)有比較好的辦法分享一下? 謝謝!
19.11.2 g) failure of an electronic power switching device in a partial turn-on mode with loss of gate (base) control. During this test, winding temperatures shall no exceed the values give in 19.7.
NOTE 3 This mode may be simulated by disconnecting the electronic power switching device gate (base) terminal and connecting an external adjustable power supply between the gate (base ) terminal and the source (emitter) terminal of the electronic power switching device. The power supply is then varied so as to achieve a current that will not damage the electronic power switching device but give the most onerous conditions of test.
標(biāo)準(zhǔn)的意思:
將MOS管的柵級(jí)斷開(kāi)再外加電源為MOS管供電，目的是要模擬出既要MOS不燒壞又要出現(xiàn)發(fā)熱的最嚴(yán)酷的情況。標(biāo)準(zhǔn)上只是說(shuō)了個(gè)原則上是：既要MOS不燒壞又要出現(xiàn)發(fā)熱的最嚴(yán)酷的情況.
但是實(shí)際操作比較困難!
那位大佬有沒(méi)有比較好的辦法分享一下? 謝謝!
